IXTK210P10T Ixys MOSFET TrenchP Power MOSFETs
Description
MOSFET TrenchP Power MOSFETs
The product with part number IXTK210P10T (MOSFET TrenchP Power MOSFETs)
is from company Ixys and distributed with basic unit price 20,17 EUR. Minimal order quantity is 1 pc, Approx. production time is 5 weeks.
IXYS Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: - 210 A Vds - Drain-Source Breakdown Voltage: - 100 V Rds On - Drain-Source Resistance: 7.5 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 15 V Vgs th - Gate-Source Threshold Voltage: - 4.5 V Qg - Gate Charge: 740 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.04 kW Mounting Style: Through Hole Package/Case: TO-264-3 Packaging: Tube Brand: IXYS Channel Mode: Enhancement Fall Time: 55 ns Forward Transconductance - Min: 90 S Minimum Operating Temperature: - 55 C Rise Time: 98 ns Series: IXTK210P10 Factory Pack Quantity: 25 Tradename: TrenchP Typical Turn-Off Delay Time: 165 ns
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