Product Details for Material from Ixys - IXTP200N055T2 - MOSFET N-CH 55V 200A TO-220 N-Channel 55V 200A (Tc) 360W (Tc) Through Hole TO-220AB

IXTP200N055T2 Ixys MOSFET N-CH 55V 200A TO-220 N-Channel 55V 200A (Tc) 360W (Tc) Through Hole TO-220AB

Part Nnumber
IXTP200N055T2
Description
MOSFET N-CH 55V 200A TO-220 N-Channel 55V 200A (Tc) 360W (Tc) Through Hole TO-220AB
Producer
Ixys
Basic price
2,90 EUR

The product with part number IXTP200N055T2 (MOSFET N-CH 55V 200A TO-220 N-Channel 55V 200A (Tc) 360W (Tc) Through Hole TO-220AB) is from company Ixys and distributed with basic unit price 2,90 EUR. Minimal order quantity is 50 pc, Approx. production time is 56 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series TrenchT2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 360W (Tc) Rds On (Max) @ Id, Vgs 4.2 mOhm @ 50A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3


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