IXTH1N200P3 Ixys MOSFET N-CH 2000V 1A TO-247 N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
Description
MOSFET N-CH 2000V 1A TO-247 N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
The product with part number IXTH1N200P3 (MOSFET N-CH 2000V 1A TO-247 N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH))
is from company Ixys and distributed with basic unit price 22,78 EUR. Minimal order quantity is 30 pc, Approx. production time is 56 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V (2kV) Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
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(keyword IXTH1N200P3 Ixys MOSFET N-CH 2000V 1A TO-247 N-Channel 2000V (2kV) 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH))
