IXFP5N100PM Ixys MOSFET N-CH 1000V 2.3A TO-220 N-Channel 1000V (1kV) 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab
Description
MOSFET N-CH 1000V 2.3A TO-220 N-Channel 1000V (1kV) 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab
The product with part number IXFP5N100PM (MOSFET N-CH 1000V 2.3A TO-220 N-Channel 1000V (1kV) 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab)
is from company Ixys and distributed with basic unit price 3,07 EUR. Minimal order quantity is 50 pc, Approx. production time is 56 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer IXYS Series HiPerFET™, PolarP2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 42W (Tc) Rds On (Max) @ Id, Vgs 2.8 Ohm @ 2.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Isolated Tab Package / Case TO-220-3 Isolated Tab
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(keyword IXFP5N100PM Ixys MOSFET N-CH 1000V 2.3A TO-220 N-Channel 1000V (1kV) 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab)
