IXFP10N60P Ixys MOSFET HiPERFET Id10 BVdass600

Part Nnumber
IXFP10N60P
Description
MOSFET HiPERFET Id10 BVdass600
Producer
Ixys
Basic price
2,66 EUR

The product with part number IXFP10N60P (MOSFET HiPERFET Id10 BVdass600) is from company Ixys and distributed with basic unit price 2,66 EUR. Minimal order quantity is 1 pc, Approx. production time is 3 weeks, Weight is 0.0023 Kg.


IXYS Product Category: MOSFET RoHS:  Details Brand: IXYS Id - Continuous Drain Current: 10 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 740 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 200 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 21 ns Forward Transconductance - Min: 11 S Minimum Operating Temperature: - 55 C Rise Time: 27 ns Series: IXFP10N60 Factory Pack Quantity: 50 Tradename: HiPerFET Typical Turn-Off Delay Time: 65 ns


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