IXFR64N60P Ixys MOSFET DIODE Id36 BVdass600

Part Nnumber
IXFR64N60P
Description
MOSFET DIODE Id36 BVdass600
Producer
Ixys
Basic price
12,77 EUR

The product with part number IXFR64N60P (MOSFET DIODE Id36 BVdass600) is from company Ixys and distributed with basic unit price 12,77 EUR. Minimal order quantity is 1 pc, Approx. production time is 2 weeks, Weight is 0.0053 Kg.


IXYS Product Category: MOSFET RoHS:  Details Brand: IXYS Id - Continuous Drain Current: 36 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 105 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 360 W Mounting Style: SMD/SMT Package/Case: TO-247-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 24 ns Forward Transconductance - Min: 63 S Minimum Operating Temperature: - 55 C Rise Time: 23 ns Series: IXFR64N60 Factory Pack Quantity: 30 Typical Turn-Off Delay Time: 79 ns


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