IXGT30N120B3D1 Ixys IXYS IXGT30N120B3D1 IGBT Transistor, 50 A 1200 V, 3-Pin TO-268

Part Nnumber
IXGT30N120B3D1
Description
IXYS IXGT30N120B3D1 IGBT Transistor, 50 A 1200 V, 3-Pin TO-268
Producer
Ixys
Basic price
6,90 EUR

The product with part number IXGT30N120B3D1 (IXYS IXGT30N120B3D1 IGBT Transistor, 50 A 1200 V, 3-Pin TO-268) is from company Ixys and distributed with basic unit price 6,90 EUR. Minimal order quantity is 1 pc.


Dimensions16.05 x 14 x 5.1mm Height5.1mm Length16.05mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current50 A Maximum Operating Temperature+150 °C Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeTO-268 Pin Count3 Width14mm Product Details IGBT Discretes, IXYS IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


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