IXGH100N30C3 Ixys IXYS IXGH100N30C3 N-channel IGBT Transistor, 75 A 300 V, 3-Pin TO-247AD

Part Nnumber
IXGH100N30C3
Description
IXYS IXGH100N30C3 N-channel IGBT Transistor, 75 A 300 V, 3-Pin TO-247AD
Producer
Ixys
Basic price
5,33 EUR

The product with part number IXGH100N30C3 (IXYS IXGH100N30C3 N-channel IGBT Transistor, 75 A 300 V, 3-Pin TO-247AD) is from company Ixys and distributed with basic unit price 5,33 EUR. Minimal order quantity is 1 pc.


Channel TypeN ConfigurationSingle Dimensions16.26 x 5.3 x 21.46mm Height21.46mm Length16.26mm Maximum Collector Emitter Voltage300 V Maximum Continuous Collector Current75 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247AD Pin Count3 Width5.3mm Product Details IGBT Discretes, IXYS IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


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