IXFR64N60Q3 Ixys IXYS IXFR64N60Q3 N-channel MOSFET Transistor, 42 A, 600 V, 3-pin ISOPLUS247
Description
IXYS IXFR64N60Q3 N-channel MOSFET Transistor, 42 A, 600 V, 3-pin ISOPLUS247
The product with part number IXFR64N60Q3 (IXYS IXFR64N60Q3 N-channel MOSFET Transistor, 42 A, 600 V, 3-pin ISOPLUS247)
is from company Ixys and distributed with basic unit price 25,52 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions16.13 x 5.21 x 21.34mm Height21.34mm Length16.13mm Maximum Continuous Drain Current42 A Maximum Drain Source Resistance0.104 Ω Maximum Drain Source Voltage600 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature150 °C Maximum Power Dissipation568 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeISOPLUS247 Pin Count3 Typical Gate Charge @ Vgs190 nC@ 10 V Typical Input Capacitance @ Vds9930 pF@ 25 V Typical Turn-Off Delay Time50 ns Typical Turn-On Delay Time45 ns Width5.21mm Product Details N-channel Power MOSFET, IXYS HiperFET™ Q3 Series The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diodeLow RDS(on) and QG (gate charge)Low intrinsic gate resistanceIndustry standard packagesLow package inductanceHigh power density MOSFET Transistors, IXYS A wide range of advanced discrete Power MOSFET devices from IXYS
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