IXFN230N10 Ixys IXYS IXFN230N10 N-channel MOSFET Transistor & Diode, 230 A, 100 V, 4-Pin SOT-227B
Description
IXYS IXFN230N10 N-channel MOSFET Transistor & Diode, 230 A, 100 V, 4-Pin SOT-227B
The product with part number IXFN230N10 (IXYS IXFN230N10 N-channel MOSFET Transistor & Diode, 230 A, 100 V, 4-Pin SOT-227B)
is from company Ixys and distributed with basic unit price 37,93 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationDual Source, Single Dimensions38.23 x 25.42 x 9.6mm Height9.6mm Length38.23mm Maximum Continuous Drain Current230 A Maximum Drain Source Resistance0.006 Ω Maximum Drain Source Voltage100 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation700 W Minimum Operating Temperature-55 °C Mounting TypeScrew Number of Elements per Chip1 Package TypeSOT-227B Pin Count4 Typical Gate Charge @ Vgs570 nC V @ 10 Typical Input Capacitance @ Vds19000 pF V @ 25 Typical Turn-Off Delay Time112 ns Typical Turn-On Delay Time40 ns Width25.42mm Product Details N-Channel Power MOSFET with Fast Intrinsic Diode (HiPerFET™), over 60A, IXYS MOSFET Transistors, IXYS
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