IXFH50N30Q3 Ixys IXYS IXFH50N30Q3 N-channel MOSFET Transistor, 50 A, 300 V, 3-pin TO247
Description
IXYS IXFH50N30Q3 N-channel MOSFET Transistor, 50 A, 300 V, 3-pin TO247
The product with part number IXFH50N30Q3 (IXYS IXFH50N30Q3 N-channel MOSFET Transistor, 50 A, 300 V, 3-pin TO247)
is from company Ixys and distributed with basic unit price 8,53 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions16.26 x 5.3 x 16.26mm Height16.26mm Length16.26mm Maximum Continuous Drain Current50 A Maximum Drain Source Resistance0.08 Ω Maximum Drain Source Voltage300 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature150 °C Maximum Power Dissipation690 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO247 Pin Count3 Typical Gate Charge @ Vgs65 nC@ 10 V Typical Input Capacitance @ Vds3160 pF@ 25 V Typical Turn-Off Delay Time24 ns Typical Turn-On Delay Time14 ns Width5.3mm Product Details N-channel Power MOSFET, IXYS HiperFET™ Q3 Series The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diodeLow RDS(on) and QG (gate charge)Low intrinsic gate resistanceIndustry standard packagesLow package inductanceHigh power density MOSFET Transistors, IXYS A wide range of advanced discrete Power MOSFET devices from IXYS
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