IXA17IF1200HJ Ixys IXYS IXA17IF1200HJ N-channel IGBT Transistor, 28 A 1200 V, 3-Pin ISOPLUS247
Part Nnumber
IXA17IF1200HJ
Description
IXYS IXA17IF1200HJ N-channel IGBT Transistor, 28 A 1200 V, 3-Pin ISOPLUS247
The product with part number IXA17IF1200HJ (IXYS IXA17IF1200HJ N-channel IGBT Transistor, 28 A 1200 V, 3-Pin ISOPLUS247)
is from company Ixys and distributed with basic unit price 7,15 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions16.13 x 5.21 x 21.34mm Height21.34mm Length16.13mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current28 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature125 °C Maximum Power Dissipation100 W Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Package TypeISOPLUS247 Pin Count3 Width5.21mm Product Details IGBT Discretes, IXYS XPT series The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat)Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltageShort circuit capability for 10usecPositive on-state voltage temperature coefficientOptional co-packed Sonic-FRD™ or HiPerFRED™ diodesInternational standard and proprietary high voltage packages IGBT Discretes & Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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